sot-89-3l 1. base 2. collector 3. emitter transistor (npn) features z low collector-emitter saturation voltage z large collector power dissipation and current z mini power type package maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 7 v collector cut-off current i cbo v cb =10v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a h fe(1) v ce =2v, i c =1ma 200 h fe(2) v ce =2v, i c =500ma 230 800 dc current gain h fe(3) v ce =2v, i c =2a 150 collector-emitter saturation voltage v ce(sat) i c =3a,i b =0.1a 1 v transition frequency f t vce=6v,ic=50ma f=200mhz 150 mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz 50 pf classification of h fe 2 rank q r s range 230 C 380 340 C 600 560 C 800 symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 7 v i c collector current 5 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 167 / w t j junction temperature 150 t stg storage temperature -55~+150 1 www.htsemi.com semiconductor jinyu 2SD965
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